31 October 2016 Improved hybrid polymer/PbS quantum dot infrared phototransistors incorporating single-layer graphene
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Abstract
The optical responsivity of bulk-heterojunction field effect phototransistors (BH-FEpTs) based on poly [2-methoxy-5-(2´- ethylhexyloxy-p-phenylenevinylene)] (MEH-PPV) and PbS quantum dot hybrids is very low. A main reason for the low responsivity is the low carrier mobility of the blends. To overcome the shortcoming, graphene with high carrier mobility (~200,000 cm2V-1s-1) can be used for improving the responsivity of BH-FEpTs. However, the influence of monolayer graphene on the photo response of BH-FEpTs still has been not studied. In this papers, BH-FEpTs and GBH-FEpTs (single layer graphene beneath the BH layer in BH-FEpTs) were fabricated. Experimentally, the GBH-FEpTs showed ultrahigh mobility for both holes and electrons (μH and μE) of 183 and 169 cm2V−1s−1, while 11.3 and 6.2 cm2V−1s−1 in BH-FEpT. Due to the greatly promoted carrier mobility and highly ordered channels for GBH-FEpTs, higher α, μ and β are obtained for GBH-FEpTs. The responsivity of GBH-FEpTs is improved to 101 A/W, which is two orders magnitude larger than BH-FEpTs (10-1 A/W).
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Xiaoxian Song, Yating Zhang, Haiting Zhang, Yu Yu, Mingxuan Cao, Yongli Che, Jianlong Wang, Xin Ding, Jianquan Yao, "Improved hybrid polymer/PbS quantum dot infrared phototransistors incorporating single-layer graphene", Proc. SPIE 10019, Optoelectronic Devices and Integration VI, 100190S (31 October 2016); doi: 10.1117/12.2242775; https://doi.org/10.1117/12.2242775
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