Solar cells based on InP/GaP/Si structure

O. Kvitsiani; D. Laperashvil; T. Laperashvili; V. Mikelashvili

doi:10.1117/12.2248086

31 October 2016 Solar cells based on InP/GaP/Si structure

O. Kvitsiani, D. Laperashvil, T. Laperashvili, V. Mikelashvili

Proceedings Volume 10019, Optoelectronic Devices and Integration VI; 100191G (2016) https://doi.org/10.1117/12.2248086
Event: SPIE/COS Photonics Asia, 2016, Beijing, China

Abstract

Solar cells (SCs) based on III-V semiconductors are reviewed. Presented work emphases on the Solar Cells containing Quantum Dots (QDs) for next-generation photovoltaics. In this work the method of fabrication of InP QDs on III-V semiconductors is investigated. The original method of electrochemical deposition of metals: indium (In), gallium (Ga) and of alloys (InGa) on the surface of gallium phosphide (GaP), and mechanism of formation of InP QDs on GaP surface is presented. The possibilities of application of InP/GaP/Si structure as SC are discussed, and the challenges arising is also considered.

Citation Download Citation

O. Kvitsiani, D. Laperashvil, T. Laperashvili, and V. Mikelashvili "Solar cells based on InP/GaP/Si structure", Proc. SPIE 10019, Optoelectronic Devices and Integration VI, 100191G (31 October 2016); https://doi.org/10.1117/12.2248086

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