31 October 2016 Anti-reflective sub-wavelength structures at a wavelength of 441.6 nm for phase masks of near-field lithography
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Abstract
With the development of micro- & nanofabrication technology, micro- & nanostructures have been widely used in many fields, including spectroscopy, coding, sensor, subwavelength element, etc. With phase masks realized by a combination of electron beam lithography (EBL), near field lithography (NFH) has great potential to fabricate versatile nanostructures, because it combines the advantages of both lithographic methods. Currently, subwavelength structures attract much attention due to their various functions, such as antireflection, polarization beam splitter and filter. In this presentation, aiming at reducing the interface reflection of a fused silica mask of NFH at a wavelength of 441.6 nm and incidence angles of either 0° or 32°. First, we will compare the difference of antireflection property of one-dimensional (1D) and two-dimensional (2D) subwavelength structures with line density of 3600 lines/mm by simulation. Then, the optimized 1D and 2D subwavelength structures with 3600 lines/mm will be fabricated by using EBL-NFH method. Finally, the antireflection property of these 1D and 2D subwavelength structures will be characterized at the wavelength of 441.6 nm.
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Jinyu Li, Jinyu Li, Huoyao Chen, Huoyao Chen, Stefanie Kroker, Stefanie Kroker, Thomas Käsebier, Thomas Käsebier, Zhengkun Liu, Zhengkun Liu, Keqiang Qiu, Keqiang Qiu, Ying Liu, Ying Liu, Ernst-Bernhard Kley, Ernst-Bernhard Kley, Xiangdong Xu, Xiangdong Xu, Yilin Hong, Yilin Hong, Shaojun Fu, Shaojun Fu, } "Anti-reflective sub-wavelength structures at a wavelength of 441.6 nm for phase masks of near-field lithography", Proc. SPIE 10022, Holography, Diffractive Optics, and Applications VII, 100220T (31 October 2016); doi: 10.1117/12.2246381; https://doi.org/10.1117/12.2246381
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