4 November 2016 GeSn/SiGeSn photonic devices for mid-infrared applications: experiments and calculations
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In this work, a fully strained GeSn photodetector with Sn atom percent of 8% is fabricated on Ge buffer on Si(001) substrate. The wavelength λ of light signals with obvious optical response for Ge0.92Sn0.08 photodetector is extended to 2 μm. The impacts of compressive strain introduced during the epitaxial growth of GeSn on Ge/Si are studied by simulation. Besides, the tensile strain engineering of GeSn photonic devices is also investigated. Lattice-matched GeSn/SiGeSn double heterostructure light emitting diodes (LEDs) with Si3N4 tensile liner stressor are designed to promote the further mid-infrared applications of GeSn photonic devices. With the releasing of the residual stress in Si3N4 liner, a large biaxial tensile strain is induced in GeSn active layer. Under biaxial tensile strain, the spontaneous emission rate rsp and internal quantum efficiency ηIQE for GeSn/SiGeSn LED are significantly improved.
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Genquan Han, Qingfang Zhang, Yan Liu, Chunfu Zhang, Yue Hao, "GeSn/SiGeSn photonic devices for mid-infrared applications: experiments and calculations", Proc. SPIE 10026, Real-time Photonic Measurements, Data Management, and Processing II, 100260T (4 November 2016); doi: 10.1117/12.2245980; https://doi.org/10.1117/12.2245980

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