28 September 2016 The influence of annealing on the electrical and optical properties of silicon-rich silicon nitride films
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Proceedings Volume 10031, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2016; 100310D (2016) https://doi.org/10.1117/12.2249111
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2016, 2016, Wilga, Poland
Abstract
In this paper measurements results of electrical and optical properties of SiNx thin layers are presented. Layers were produced by chemical vapor deposition on n-type (100)-oriented silicon substrates. Measurements were performed for samples directly after deposition and for samples annealed in temperature of 1073 K.

Resistance Rp, capacity Cp, phase angle shift θ and dielectric loss factor tgδ were the measuring parameters on AC in the frequency range from 50 Hz to 5 MHz as a function of measurement temperature from the range 20 K – 373 K. Based on this, the conductivity σ and the activation energy of conductivity were determined. Photoluminescence spectra were recorded at room temperature in the spectral region of 350 – 800 nm using a He-Cd laser source with λ=325 nm.

The influence of annealing on the electrical and optical properties was explained. Current resonance phenomenon and reduction of photoluminescence spectra were observed.
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Karolina Czarnacka, Karolina Czarnacka, F. F. Komarov, F. F. Komarov, } "The influence of annealing on the electrical and optical properties of silicon-rich silicon nitride films", Proc. SPIE 10031, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2016, 100310D (28 September 2016); doi: 10.1117/12.2249111; https://doi.org/10.1117/12.2249111
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