20 October 2016 Improving contact layer patterning using SEM contour based etch model
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Proceedings Volume 10032, 32nd European Mask and Lithography Conference; 1003202 (2016) https://doi.org/10.1117/12.2248013
Event: 32nd European Mask and Lithography Conference, 2016, Dresden, Germany
Abstract
The patterning of the contact layer is modulated by strong etch effects that are highly dependent on the geometry of the contacts. Such litho-etch biases need to be corrected to ensure a good pattern fidelity. But aggressive designs contain complex shapes that can hardly be compensated with etch bias table and are difficult to characterize with standard CD metrology. In this work we propose to implement a model based etch compensation method able to deal with any contact configuration. With the help of SEM contours, it was possible to get reliable 2D measurements particularly helpful to calibrate the etch model. The selections of calibration structures was optimized in combination with model form to achieve an overall errRMS of 3nm allowing the implementation of the model in production.
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François Weisbuch, François Weisbuch, Andrey Lutich, Andrey Lutich, Jirka Schatz, Jirka Schatz, Tino Hertzsch, Tino Hertzsch, Hans-Peter Moll, Hans-Peter Moll, } "Improving contact layer patterning using SEM contour based etch model", Proc. SPIE 10032, 32nd European Mask and Lithography Conference, 1003202 (20 October 2016); doi: 10.1117/12.2248013; https://doi.org/10.1117/12.2248013
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