20 October 2016 Anamorphic imaging at high-NA EUV: mask error factor and interaction between demagnification and lithographic metrics
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Proceedings Volume 10032, 32nd European Mask and Lithography Conference; 100320B (2016) https://doi.org/10.1117/12.2250630
Event: 32nd European Mask and Lithography Conference, 2016, Dresden, Germany
Abstract
This paper presents some of the main imaging properties introduced with the design of a possible new EUV High-NA (NA > 0.5) exposure system with anamorphic projection lens, a concept not new in optics but applied for the first time in semiconductor lithography. The system is projected to use a demagnification of 4 in the X-direction and of 8 in the Y-direction.

We show that a new definition of the Mask Error Factor needs to be used in order to describe correctly the property introduced by the anamorphic optics. Moreover, for both 1-Dimensional (1D) and 2-Dimensional (2D) features the reticle writing error in the low demagnification direction X is more critical than the error in high demagnification direction Y.

The effects of the change in demagnification on imaging are described on an elementary case, and are ultimately linked to the basic physical phenomenon of diffraction.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gerardo Bottiglieri, Thorsten Last, Alberto Colina, Eelco van Setten, Gijsbert Rispens, Jan van Schoot, Koen van Ingen Schenau, "Anamorphic imaging at high-NA EUV: mask error factor and interaction between demagnification and lithographic metrics", Proc. SPIE 10032, 32nd European Mask and Lithography Conference, 100320B (20 October 2016); doi: 10.1117/12.2250630; https://doi.org/10.1117/12.2250630
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