20 October 2016 Researching new EUV pellicle films for source powers beyond 250 watts
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Proceedings Volume 10032, 32nd European Mask and Lithography Conference; 100320L (2016) https://doi.org/10.1117/12.2255040
Event: 32nd European Mask and Lithography Conference, 2016, Dresden, Germany
Abstract
In order to deploy EUV lithography as a high volume manufacturing technology an extreme control of reticle defectivity is required. Systematic defect printing is unaffordable. A potential solution being investigated for meeting the EUV reticle contamination control requirements is to utilize a suspended thin membrane (pellicle) mounted at a fixed distance in front of the reticle as a physical barrier against particles. Pellicles of the aspect ratios relevant for the scanner (~11x14 cm2, ~50 nm) that are based on polycrystalline silicon were produced and successful imaging runs were carried out. Investigations of pellicles using different materials continue to ensure having membranes capable of withstanding future high EUV source powers and to ensure larger EUV transmission values. The ideal requirements of the pellicle are: (i) maximum EUV transmission ideally above 90% single pass, (ii) chemical stability and (iii) thermo-mechanical resistance under EUV/H2. Since fulfilling all the requirements in one single layer is a challenge, different layer film architectures are proposed. This paper discusses such architectures, both silicon- and carbon-based. The base materials are complemented by nanometre thin coatings that increase IR absorption and thus enhance emissivity and that prevents oxidation of the base material occurring in high power EUV systems.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maxim Nasalevich, Pieter Jan van Zwol, Erik Abegg, Pim Voorthuijzen, David Vles, Mária Péter, Wim van der Zande, Hans Vermeulen, "Researching new EUV pellicle films for source powers beyond 250 watts", Proc. SPIE 10032, 32nd European Mask and Lithography Conference, 100320L (20 October 2016); doi: 10.1117/12.2255040; https://doi.org/10.1117/12.2255040
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