3 February 2017 Prospects of efficient band-to-band emission in silicon LEDs
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Proceedings Volume 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems; 1003602 (2017) https://doi.org/10.1117/12.2245589
Event: Fourth Conference on Sensors, MEMS and Electro-Optic Systems, 2016, Skukuza, Kruger National Park, South Africa
Abstract
In this paper a review is presented of light emission from forward-biased silicon diodes. After a treatment of the carrier recombination physics governing in this indirect-bandgap material, the article describes important works in this field. Then, routes are proposed for further improvement of the internal quantum efficiency for light emission. A good choice of carrier injection level will limit the impact of both Shockley-Read-Hall recombination and Auger recombination. However, the structural design of the diode has a strong influence on the overall quantum efficiency, as both surface recombination must be dealt with, and contact recombination avoided. New attributes of CMOS such as embedded SiGe offer additional opportunities for silicon LED architectures and their application.
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Jurriaan Schmitz, Jurriaan Schmitz, } "Prospects of efficient band-to-band emission in silicon LEDs", Proc. SPIE 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems, 1003602 (3 February 2017); doi: 10.1117/12.2245589; https://doi.org/10.1117/12.2245589
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