Optical emission probabilities from silicon were analyzed by appropriate modelling, taking the silicon energy band structure, available carrier energy spread, and available carrier momentum spreads that can be realized with typical device design and operating conditions as available in current silicon technologies. The analyses showed that creation of micron-dimensioned conduction channels as made possible by using a RF bipolar fabrication process, appropriate doping and variations in the channel utilizing Boron, Phosphorous and Germanium doping, and using reversed biased junctions to energize specifically electrons, appropriately controlling carrier energy and carrier density, and control over carrier momentum through appropriate impurity scattering technology; particularly, 280nm, 650nm and 850nm emissions can be stimulated. Particularly, using p+nn and p+np+ device designs with appropriate control over carrier energy, carrier type balancing and implementing enhanced impurity scattering in some device regions, show the greatest potential to enhance these emissions. First iteration empirically conducted device realizations results show interesting peaking features and nonuniform high intensity behaviors. Particularly, it was succeeded to increase the emissions at 650nm with about two orders of magnitude. Internal electrical- to- optical conversion efficiencies of up to 10-4 and intensity emissions of up to 200 nW μm2 are derived, with further prospects to increase emissions further. The attained results compare extremely favorable, and in some cases exceeds, results as published by Venter et al, Kuindersma et al and Du Plessis et al using related technologies.