3 February 2017 Complementary field-effect transistors for flexible electronics
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Proceedings Volume 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems; 100360K (2017) https://doi.org/10.1117/12.2243001
Event: Fourth Conference on Sensors, MEMS and Electro-Optic Systems, 2016, Skukuza, Kruger National Park, South Africa
Abstract
Key issues for flexible complementary electronics are low temperature processing, sufficient performance of the integrated p- and n-type FET devices, and cheap semiconducting and dielectric materials. Organic semiconductors commonly depict p-type behavior, whereas metal oxide semiconductors show n-type characteristics. This paper presents a new approach for common integration of organic and ZnO transistors on transparent substrates for complementary transistor electronics. The gate dielectric consists of a special high-k resin, the metallization utilizes Au and Al films. The thermal budget for processing of the devices is limited to 120°C to enable foil substrates.
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Ulrich Hilleringmann, Ulrich Hilleringmann, Fábio F. Vidor, Fábio F. Vidor, Thorsten Meyers, Thorsten Meyers, } "Complementary field-effect transistors for flexible electronics", Proc. SPIE 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems, 100360K (3 February 2017); doi: 10.1117/12.2243001; https://doi.org/10.1117/12.2243001
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