3 February 2017 Characterisation of diode-connected SiGe BiCMOS HBTs for space applications
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Proceedings Volume 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems; 1003613 (2017) https://doi.org/10.1117/12.2244596
Event: Fourth Conference on Sensors, MEMS and Electro-Optic Systems, 2016, Skukuza, Kruger National Park, South Africa
Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high current gain and low-output resistance due to its vertical profile, BiCMOS technology is increasingly becoming a preferred technology for researchers to realise next-generation space-based optoelectronic applications. BiCMOS transistors have inherent radiation hardening, to an extent predictable cryogenic performance and monolithic integration potential.

SiGe BiCMOS transistors and p-n junction diodes have been researched and used as a primary active component for over the last two decades. However, further research can be conducted with diode-connected heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. This work investigates these characteristics and models devices by adapting standard fabrication technology components.

This work focuses on measurements of the current-voltage relationship (I-V curves) and capacitance-voltage relationships (C-V curves) of diode-connected HBTs. One configuration is proposed and measured, which is emitterbase shorted. The I-V curves are measured for various temperature points ranging from room temperature (300 K) to the temperature of liquid nitrogen (77 K). The measured datasets are used to extract a model of the formed diode operating at cryogenic temperatures and used as a standard library component in computer aided software designs.

The advantage of having broad-range temperature models of SiGe transistors becomes apparent when considering implementation of application-specific integrated circuits and silicon-based infrared radiation photodetectors on a single wafer, thus shortening interconnects and lowering parasitic interference, decreasing the overall die size and improving on overall cost-effectiveness. Primary applications include space-based geothermal radiation sensing and cryogenic terahertz radiation sensing.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Johan Venter, Johan Venter, Saurabh Sinha, Saurabh Sinha, Wynand Lambrechts, Wynand Lambrechts, } "Characterisation of diode-connected SiGe BiCMOS HBTs for space applications", Proc. SPIE 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems, 1003613 (3 February 2017); doi: 10.1117/12.2244596; https://doi.org/10.1117/12.2244596


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