3 February 2017 Mid-infrared detection in p-GaAs/AlGaAs heterostructures with a current blocking barrier
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Proceedings Volume 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems; 1003615 (2017) https://doi.org/10.1117/12.2242898
Event: Fourth Conference on Sensors, MEMS and Electro-Optic Systems, 2016, Skukuza, Kruger National Park, South Africa
Abstract
For the infrared detection in the 3-5 μm range, p-GaAs/AlxGa1-xAs heterojunction is an attractive material system due to light hole/heavy hole and spin-orbit split-off intra-valance band transitions in this wavelength range. Varying the Al mole fraction (x) provides the tuning for the wavelength threshold, while graded AlxGa1-xAs potential barriers create an asymmetry to allow a photovoltaic operation. The photovoltaic mode of operation offers the advantage of thermal noise limited performance. In our preliminary work, a 2 – 6 μm photovoltaic detector was studied. Implementation of an additional current blocking barrier improved the specific detectivity (D*) by two orders of magnitude, to 1.9×1011 Jones at 2.7 μm, at 77K. At zero bias, the resistance-area product (R0A) had a value of ~ 7.2×108 Ω cm2, which is five orders higher in magnitude (with a corresponding reduction of the responsivity by only a factor of ~ 1.5), compared to the R0A value without the blocking barrier. A photoresponse was observed up to 130K.
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Dilip Chauhan, Dilip Chauhan, A. G. Unil Perera, A. G. Unil Perera, Lianhe Li, Lianhe Li, Li Chen, Li Chen, Edmund H. Linfield, Edmund H. Linfield, } "Mid-infrared detection in p-GaAs/AlGaAs heterostructures with a current blocking barrier", Proc. SPIE 10036, Fourth Conference on Sensors, MEMS, and Electro-Optic Systems, 1003615 (3 February 2017); doi: 10.1117/12.2242898; https://doi.org/10.1117/12.2242898
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