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17 February 2017 Multi-watt passively Q-switched Yb:YAB/Cr:YAG microchip lasers
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A trigonal 5.6 at.% Yb:YAl3(BO3)4 (Yb:YAB) crystal is employed in continuous-wave (CW) and passively Q-switched microchip lasers pumped by a diode at 978 nm. Using a 3 mm-thick, c-cut Yb:YAB crystal, which has a higher pump absorption efficiency, efficient CW microchip laser operation is demonstrated. This laser generated a maximum output power of 7.18 W at 1041–1044 nm with a slope efficiency η of 67% (with respect to the absorbed pump power) and an almost diffraction-limited beam, M2 x,y < 1.1. Inserting a Cr:YAG saturable absorber, stable passive Q-switching of the Yb:YAB microchip laser was obtained. The maximum average output power from the Yb:YAB/Cr:YAG laser reached 2.82 W at 1042 nm with η = 53% and a conversion efficiency with respect to the CW mode of 65% (when using a 0.7 mm-thick Cr:YAG). The latter corresponded to a pulse duration and energy of 7.1 ns / 47 μJ at a pulse repetition rate (PRR) of 60 kHz. Using a 1.3 mm-thick Cr:YAG, 2.02 W were achieved at 1041 nm corresponding to η = 38%. The pulse characteristics were 4.9 ns / 83 μJ at PRR = 24.3 kHz and the maximum peak power reached 17 kW. Yb:YAB crystals are very promising for compact sub-ns power-scalable microchip lasers.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Josep Maria Serres, Pavel A. Loiko, Xavier Mateos, Junhai Liu, Huaijing Zhang, Konstantin Yumashev, Uwe Griebner, Valentin Petrov, Magdalena Aguiló, and Francesc Díaz "Multi-watt passively Q-switched Yb:YAB/Cr:YAG microchip lasers", Proc. SPIE 10082, Solid State Lasers XXVI: Technology and Devices, 100820T (17 February 2017);

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