17 February 2017 InGaN diode pumped Pr:SrF2 laser at 639 nm wavelength
Author Affiliations +
We report on Pr:SrF2 single crystal laser operation at 639nm wavelength under blue laser diode pumping. The laser system was operated in the pulsed regime at 100 Hz repetition rate and 2 ms pulse duration. Using 3.5W InGaN laser diode as a pump source, 6mW of the mean output power at 639nm was extracted from the Pr:SrF2 sample. The corresponding slope efficiency related to the absorbed mean power was 16.4 %.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Fibrich, Martin Fibrich, Maxim Doroshenko, Maxim Doroshenko, Jan Šulc, Jan Šulc, Vasilii Konyushkin, Vasilii Konyushkin, Andrei Nakladov, Andrei Nakladov, Helena Jelínková, Helena Jelínková, } "InGaN diode pumped Pr:SrF2 laser at 639 nm wavelength", Proc. SPIE 10082, Solid State Lasers XXVI: Technology and Devices, 1008220 (17 February 2017); doi: 10.1117/12.2251955; https://doi.org/10.1117/12.2251955


Back to Top