17 February 2017 InGaN diode pumped Pr:SrF2 laser at 639 nm wavelength
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Abstract
We report on Pr:SrF2 single crystal laser operation at 639nm wavelength under blue laser diode pumping. The laser system was operated in the pulsed regime at 100 Hz repetition rate and 2 ms pulse duration. Using 3.5W InGaN laser diode as a pump source, 6mW of the mean output power at 639nm was extracted from the Pr:SrF2 sample. The corresponding slope efficiency related to the absorbed mean power was 16.4 %.
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Martin Fibrich, Martin Fibrich, Maxim Doroshenko, Maxim Doroshenko, Jan Šulc, Jan Šulc, Vasilii Konyushkin, Vasilii Konyushkin, Andrei Nakladov, Andrei Nakladov, Helena Jelínková, Helena Jelínková, } "InGaN diode pumped Pr:SrF2 laser at 639 nm wavelength", Proc. SPIE 10082, Solid State Lasers XXVI: Technology and Devices, 1008220 (17 February 2017); doi: 10.1117/12.2251955; https://doi.org/10.1117/12.2251955
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