17 February 2017 Tm:CaGdAlO4: spectroscopy, microchip laser and passive Q-switching by carbon nanostructures
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Abstract
Absorption, stimulated-emission and gain cross-sections are determined for 3 at.% Tm:CaGdAlO4. This crystal is employed in a microchip laser diode-pumped at 802 nm. In the continuous-wave (CW) regime, this laser generates 1.16 W at 1883-1893 nm with a slope efficiency of 32% with respect to the absorbed pump power. Using a special "bandpass" output coupler, vibronic CW laser operation up to 2043 nm is achieved. For passive Q-switching of the Tm:CaGdAlO4 laser-saturable absorbers (SAs) based on CVD-grown graphene and randomly-oriented arc-discharge single-walled carbon nanotubes (SWCNTs) in a PMMA film. The SWCNT-SA demonstrates superior performance. The laser produced a maximum average output power of 245 mW at 1844 nm with a slope efficiency of 8%. The latter corresponds to a pulse energy and duration of 6 μJ and 138 ns, respectively, at a repetition rate of 41 kHz. Using the graphene-SA, 2.8 μJ, 490 ns pulses are obtained at a repetition rate of 86 kHz.
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Pavel Loiko, Xavier Mateos, Sun Young Choi, Fabian Rotermund, Christoph Liebald, Mark Peltz, Sophie Vernay, Daniel Rytz, Yicheng Wang, Matthias Kemnitzer, Antonio Agnesi, Elena Vilejshikova, Konstantin Yumashev, Uwe Griebner, Valentin Petrov, "Tm:CaGdAlO4: spectroscopy, microchip laser and passive Q-switching by carbon nanostructures", Proc. SPIE 10082, Solid State Lasers XXVI: Technology and Devices, 1008228 (17 February 2017); doi: 10.1117/12.2254043; https://doi.org/10.1117/12.2254043
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