22 February 2017 Continued improvement in reduced-mode (REM) diodes enable 272 W from 105 μm 0.15 NA beam
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Proceedings Volume 10086, High-Power Diode Laser Technology XV; 1008609 (2017) https://doi.org/10.1117/12.2253000
Event: SPIE LASE, 2017, San Francisco, California, United States
Abstract
High-power, high-brightness diode lasers from 8xx nm to 9xx nm have been pursued in many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, 915 nm - 976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. Thus, there have been many technical efforts on driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, elementTM. In the past decade, the amount of power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brilliance and the development of techniques for efficiently coupling multiple emitters into a single fiber. In this paper, we demonstrate the further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report the record 272W from a 2×9 elementTM with 105 μm/0.15 NA beam using x-REM diodes and a new product introduction at 200W output power from 105 μm/0.15 NA beam at 915 nm.
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M. Kanskar, L. Bao, Z. Chen, D. Dawson, M. DeVito, W. Dong, M. Grimshaw, X. Guan, M. Hemenway, R. Martinsen, W. Urbanek, S. Zhang, "Continued improvement in reduced-mode (REM) diodes enable 272 W from 105 μm 0.15 NA beam", Proc. SPIE 10086, High-Power Diode Laser Technology XV, 1008609 (22 February 2017); doi: 10.1117/12.2253000; https://doi.org/10.1117/12.2253000
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