22 February 2017 Ultimate high power operation of 9xx-nm single emitter broad stripe laser diodes
Author Affiliations +
Proceedings Volume 10086, High-Power Diode Laser Technology XV; 100860D (2017) https://doi.org/10.1117/12.2251145
Event: SPIE LASE, 2017, San Francisco, California, United States
Design optimization of single emitter broad stripe 9xx-nm laser diodes was studied to achieve ultimate high power and high efficiency operation for a use in fiber laser pumping and other industrial applications. We tuned laser vertical layer design and stripe width in terms of optical confinement as well as electrical resistance. As a result, newly designed LDs with 4mm-long cavity and 220 μm-wide stripe successfully demonstrate maximum CW output power as high as 33 W and high efficiency operation of more than 60 % PCE even at 27 W output power. In pulse measurement, the maximum output of 68 W was obtained.
Conference Presentation
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Yoshikazu Kaifuchi, Yuji Yamagata, Ryozaburo Nogawa, Rintaro Morohashi, Yumi Yamada, Masayuki Yamaguchi, "Ultimate high power operation of 9xx-nm single emitter broad stripe laser diodes", Proc. SPIE 10086, High-Power Diode Laser Technology XV, 100860D (22 February 2017); doi: 10.1117/12.2251145; https://doi.org/10.1117/12.2251145


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