22 February 2017 Ultimate high power operation of 9xx-nm single emitter broad stripe laser diodes
Author Affiliations +
Proceedings Volume 10086, High-Power Diode Laser Technology XV; 100860D (2017) https://doi.org/10.1117/12.2251145
Event: SPIE LASE, 2017, San Francisco, California, United States
Design optimization of single emitter broad stripe 9xx-nm laser diodes was studied to achieve ultimate high power and high efficiency operation for a use in fiber laser pumping and other industrial applications. We tuned laser vertical layer design and stripe width in terms of optical confinement as well as electrical resistance. As a result, newly designed LDs with 4mm-long cavity and 220 μm-wide stripe successfully demonstrate maximum CW output power as high as 33 W and high efficiency operation of more than 60 % PCE even at 27 W output power. In pulse measurement, the maximum output of 68 W was obtained.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshikazu Kaifuchi, Yoshikazu Kaifuchi, Yuji Yamagata, Yuji Yamagata, Ryozaburo Nogawa, Ryozaburo Nogawa, Rintaro Morohashi, Rintaro Morohashi, Yumi Yamada, Yumi Yamada, Masayuki Yamaguchi, Masayuki Yamaguchi, } "Ultimate high power operation of 9xx-nm single emitter broad stripe laser diodes", Proc. SPIE 10086, High-Power Diode Laser Technology XV, 100860D (22 February 2017); doi: 10.1117/12.2251145; https://doi.org/10.1117/12.2251145

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