22 February 2017 Development of highly-efficient laser diodes emitting at around 1060nm
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Proceedings Volume 10086, High-Power Diode Laser Technology XV; 100860J (2017) https://doi.org/10.1117/12.2252348
Event: SPIE LASE, 2017, San Francisco, California, United States
Abstract
An overview is presented on the recent progress in the development of high power laser bars and single emitters emitting at wavelengths around 1060 nm. The development is focused on high reliability, thermal stability and high efficiency of the laser devices.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Pietrzak, A. Pietrzak, R. Huelsewede, R. Huelsewede, M. Zorn, M. Zorn, J. Meusel, J. Meusel, V. Loyo-Maldonado, V. Loyo-Maldonado, J. Sebastian, J. Sebastian, } "Development of highly-efficient laser diodes emitting at around 1060nm", Proc. SPIE 10086, High-Power Diode Laser Technology XV, 100860J (22 February 2017); doi: 10.1117/12.2252348; https://doi.org/10.1117/12.2252348
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