24 February 2017 1180 nm GaInNAs quantum well based high power DBR laser diodes
Author Affiliations +
Proceedings Volume 10086, High-Power Diode Laser Technology XV; 100860K (2017) https://doi.org/10.1117/12.2251317
Event: SPIE LASE, 2017, San Francisco, California, United States
We report state-of-the-art results for 1180nm (narrow linewidth) laser diodes based on GaInNAs quantum wells and show results for ridge waveguide DBR laser diode including its reliability tests. Manuscript demonstrates 500 mW output power in continuous-wave operation at room temperature, wide single mode tuning region and narrow linewidth operation. Devices reached narrow linewidth operation (>250 kHz) across their operation band.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jukka Viheriälä, Jukka Viheriälä, Antti T. Aho, Antti T. Aho, Heikki Virtanen, Heikki Virtanen, Mervi Koskinen, Mervi Koskinen, Michael Dumitrescu, Michael Dumitrescu, Mircea Guina, Mircea Guina, } "1180 nm GaInNAs quantum well based high power DBR laser diodes", Proc. SPIE 10086, High-Power Diode Laser Technology XV, 100860K (24 February 2017); doi: 10.1117/12.2251317; https://doi.org/10.1117/12.2251317


Back to Top