24 February 2017 High power single lateral mode 1050 nm laser diode bar
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Proceedings Volume 10086, High-Power Diode Laser Technology XV; 100860Y (2017) https://doi.org/10.1117/12.2269237
Event: SPIE LASE, 2017, San Francisco, California, United States
Abstract
We present recent development of single lateral mode 1050 nm laser bars. The devices are based on an InGaAs/AlGaAs single quantum well and an asymmetric large optical cavity waveguide structure. By optimizing the AlGaAs composition, doping profiles, and QW thickness, the low internal loss of 0.5 cm-1 and high internal quantum efficiency of 98% are obtained. A standard bar (10% fill factor; 4mm cavity length) reaches 72% peak electro-optical efficiency and 1.0 W/A slope efficiency at 25°C. To achieve high single lateral mode power, the current confinement and optical loss profile in lateral direction are carefully designed and optimized to suppress higher order lateral modes. We demonstrate 1.5W single lateral mode power per emitter from a 19-emitter 10mm bar at 25°C. High electro-optical efficiency are also demonstrated at 25°C from two separate full-bar geometries on conduction cooled packaging: 20 W with <50% electro-optical efficiency from a 19-emitter bar and 50 W with <45% electro-optical efficiency from a 50-emitter bar.
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Guoli Liu, Guoli Liu, Jingwei Li, Jingwei Li, Li Fan, Li Fan, Zuntu Xu, Zuntu Xu, John Morales, John Morales, David Schleuning, David Schleuning, Zhixi Bian, Zhixi Bian, Michael Peters, Michael Peters, Heiko Winhold, Heiko Winhold, Bruno Acklin, Bruno Acklin, } "High power single lateral mode 1050 nm laser diode bar", Proc. SPIE 10086, High-Power Diode Laser Technology XV, 100860Y (24 February 2017); doi: 10.1117/12.2269237; https://doi.org/10.1117/12.2269237
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