SPIE LASE | JAN 28 - FEB 2 2017
Vertical External Cavity Surface Emitting Lasers (VECSELs) VII
Proceedings Volume 10087 is from: Logo
Jan 28 - Feb 2 2017
San Francisco, California, United States
Front Matter: Volume 10087
Proc. SPIE 10087, Front Matter: Volume 10087, 1008701(8 May 2017);doi: 10.1117/12.2276088
High Power cw / Single Frequency
Proc. SPIE 10087, Schemes for efficient QW pumping of AlGaInP disk lasers, 1008703(22 February 2017);doi: 10.1117/12.2250901
Proc. SPIE 10087, Industrial integration of high coherence tunable single frequency semiconductor lasers based on VECSEL technology for scientific instrumentation in NIR and MIR, 1008704(22 February 2017);doi: 10.1117/12.2253230
Proc. SPIE 10087, GaSb-based VECSEL for high-power applications and Ho-pumping, 1008705(22 February 2017);doi: 10.1117/12.2254287
Proc. SPIE 10087, Non-equilibrium effects in VECSELs, 1008706(22 February 2017);doi: 10.1117/12.2253249
Proc. SPIE 10087, Optically pumped semiconductor lasers: from nonlinear lensing to solar lasers (Conference Presentation), 1008707();doi: 10.1117/12.2252079
Proc. SPIE 10087, Optical efficiency and gain dynamics of ultrafast semiconductor disk lasers (Conference Presentation), 1008708();doi: 10.1117/12.2250138
Proc. SPIE 10087, Characterization of optically pumped semiconductor lasers in pulsed mode as a function of temperature, 1008709(22 February 2017);doi: 10.1117/12.2253751
Novel Concepts I
Proc. SPIE 10087, Highly coherent modeless broadband VECSEL, 100870A(22 February 2017);doi: 10.1117/12.2252584
Proc. SPIE 10087, Multi-angle VECSEL cavities for dispersion control and multi-color operation, 100870B(22 February 2017);doi: 10.1117/12.2250579
Proc. SPIE 10087, Low-noise III-V metasurface based semiconductor vortex laser and rotational Doppler velocimetry, 100870C(7 March 2017);doi: 10.1117/12.2253040
Mode Locking I
Proc. SPIE 10087, Commercial mode-locked vertical external cavity surface emitting lasers, 100870D(22 February 2017);doi: 10.1117/12.2254830
Proc. SPIE 10087, High power sub-200fs pulse generation from a colliding pulse modelocked VECSEL, 100870E(22 February 2017);doi: 10.1117/12.2252525
Proc. SPIE 10087, High-power 100-fs SESAM-modelocked VESCEL (Conference Presentation), 100870F();doi: 10.1117/12.2249998
Novel Gain Materials and Wavelength Conversion
Proc. SPIE 10087, Advances in 750 nm VECSELs (Conference Presentation), 100870I();doi: 10.1117/12.2252008
Novel Concepts II
Proc. SPIE 10087, The optically pumped semiconductor membrane external-cavity surface-emitting laser (MECSEL): a concept based on a diamond-sandwiched active region, 100870J(27 February 2017);doi: 10.1117/12.2252182
Proc. SPIE 10087, Development of optically pumped DBR-free semiconductor disk lasers (Conference Presentation), 100870K();doi: 10.1117/12.2251652
Proc. SPIE 10087, The development and fundamental analysis of type-II VECSELs at 1.2 µm (Conference Presentation), 100870L();doi: 10.1117/12.2252882
Mode Locking II
Proc. SPIE 10087, Various phenomena of self-mode-locked operation in optically pumped semiconductor lasers, 100870M(22 February 2017);doi: 10.1117/12.2250762
Proc. SPIE 10087, Towards self-mode locking of AlGaInP-VECSELs (Conference Presentation), 100870N();doi: 10.1117/12.2252473
Proc. SPIE 10087, Mode-locked VECSEL SESAM with intracavity antenna for terahertz emission, 100870O(22 February 2017);doi: 10.1117/12.2252346
Proc. SPIE 10087, Stabilized dual-comb MIXSEL (Conference Presentation), 100870P();doi: 10.1117/12.2249999
Poster Session
Proc. SPIE 10087, Numerical study of VECSELs for generation of mid-infrared radiation, 100870Q(22 February 2017);doi: 10.1117/12.2253103
Proc. SPIE 10087, Improved gain chip holder design for high efficient, high power AlGaInP-VECSEL, 100870R(28 March 2017);doi: 10.1117/12.2253670
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