28 March 2017 Improved gain chip holder design for high efficient, high power AlGaInP-VECSEL
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In AlGaInP based VECSELs, a low thermal conductivity of the substrate with included distributed Bragg reflector leads to a strong temperature-dependent performance due to the limited charge-carrier confinement. For efficient heat removal, a good bonding between VECSEL-chip and intra-cavity heat spreader is indispensable. Here, a new designed sample holding device which allows improved bonding is presented. With this device, the laser performance of a barrier-pumped AlGaInP VECSEL emitting at 665 nm could be improved tremendously which resulted in an output power of more than 1W at a heatsink temperature of 10°C. We present a full characterization of the laser system including a comparison between standard and the new device.
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Philipp Tatar-Mathes, Hermann Kahle, Cherry M. N. Mateo, Uwe Brauch, Roman Bek, Michael Jetter, Thomas Graf, Peter Michler, "Improved gain chip holder design for high efficient, high power AlGaInP-VECSEL", Proc. SPIE 10087, Vertical External Cavity Surface Emitting Lasers (VECSELs) VII, 100870R (28 March 2017); doi: 10.1117/12.2253670; https://doi.org/10.1117/12.2253670

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