28 March 2017 Improved gain chip holder design for high efficient, high power AlGaInP-VECSEL
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Abstract
In AlGaInP based VECSELs, a low thermal conductivity of the substrate with included distributed Bragg reflector leads to a strong temperature-dependent performance due to the limited charge-carrier confinement. For efficient heat removal, a good bonding between VECSEL-chip and intra-cavity heat spreader is indispensable. Here, a new designed sample holding device which allows improved bonding is presented. With this device, the laser performance of a barrier-pumped AlGaInP VECSEL emitting at 665 nm could be improved tremendously which resulted in an output power of more than 1W at a heatsink temperature of 10°C. We present a full characterization of the laser system including a comparison between standard and the new device.
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Philipp Tatar-Mathes, Philipp Tatar-Mathes, Hermann Kahle, Hermann Kahle, Cherry M. N. Mateo, Cherry M. N. Mateo, Uwe Brauch, Uwe Brauch, Roman Bek, Roman Bek, Michael Jetter, Michael Jetter, Thomas Graf, Thomas Graf, Peter Michler, Peter Michler, } "Improved gain chip holder design for high efficient, high power AlGaInP-VECSEL", Proc. SPIE 10087, Vertical External Cavity Surface Emitting Lasers (VECSELs) VII, 100870R (28 March 2017); doi: 10.1117/12.2253670; https://doi.org/10.1117/12.2253670
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