Presentation + Paper
20 February 2017 1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system
A. K. Hansen, M. Christensen, D. Noordegraaf, P. Heist, E. Papastathopoulos, V. Loyo-Maldonado, O. B. Jensen, M. L. Stock, P. M. W. Skovgaard
Author Affiliations +
Abstract
Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm.

We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. K. Hansen, M. Christensen, D. Noordegraaf, P. Heist, E. Papastathopoulos, V. Loyo-Maldonado, O. B. Jensen, M. L. Stock, and P. M. W. Skovgaard "1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system", Proc. SPIE 10088, Nonlinear Frequency Generation and Conversion: Materials and Devices XVI, 1008802 (20 February 2017); https://doi.org/10.1117/12.2251964
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconductor lasers

Crystals

Laser systems engineering

Nonlinear crystals

Laser stabilization

Mirrors

Second-harmonic generation

Back to Top