We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications.
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A. K. Hansen, M. Christensen, D. Noordegraaf, P. Heist, E. Papastathopoulos, V. Loyo-Maldonado, O. B. Jensen, M. L. Stock, P. M. W. Skovgaard, "1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system," Proc. SPIE 10088, Nonlinear Frequency Generation and Conversion: Materials and Devices XVI, 1008802 (20 February 2017);