20 February 2017 Low temperature deposition of inorganic films by excimer laser assisted chemical vapor deposition
Author Affiliations +
Abstract
In this study, silicon nitride film is deposited by laser assisted chemical vapor deposition technique based on the direct photolysis of SiH4/NH3 gas mixture using argon fluoride excimer laser of 193 nm wavelength at low substrate temperature around 100°C. By illuminating laser beam in parallel to sample surface, sample damage or heating can be avoided allowing compatibility of temperature sensitive device architectures. A wide range of processing parameters for laser and reactant gases are examined in correlation with deposition mechanisms.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seungkuk Kuk, Jongmin Park, Tao Zhang, David J. Hwang, "Low temperature deposition of inorganic films by excimer laser assisted chemical vapor deposition", Proc. SPIE 10091, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII, 1009105 (20 February 2017); doi: 10.1117/12.2251269; https://doi.org/10.1117/12.2251269
PROCEEDINGS
6 PAGES


SHARE
Back to Top