22 February 2017 What limits the power conversion efficiency of GaN-based lasers?
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Proceedings Volume 10098, Physics and Simulation of Optoelectronic Devices XXV; 100980Q (2017); doi: 10.1117/12.2256129
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
Shuji Nakamura predicted in his Nobel lecture that GaN-based blue laser diodes are the future of solid state lighting. However, GaN-lasers still exhibit less than 40% electrical-to-optical power conversion efficiency while some blue LEDs exceed 80% and some GaAs-based infrared lasers exceed 70%. This talk investigates the reasons behind the efficiency limitation of GaN-based lasers and proposes an improved efficiency analysis method.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joachim Piprek, "What limits the power conversion efficiency of GaN-based lasers?", Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 100980Q (22 February 2017); doi: 10.1117/12.2256129; http://dx.doi.org/10.1117/12.2256129
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KEYWORDS
Quantum wells

Absorption

Resistance

Waveguides

Gallium nitride

Semiconductor lasers

Electron beam lithography

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