22 February 2017 Analysis of carrier dynamic effects on frequency response of tin incorporated group-IV alloy-based transistor laser
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Abstract
In this work we present an analysis of frequency response of Si-Si0.12Ge0.73Sn0.15/Si0.11Ge0.73Sn0.16 n-p-n mid-infrared transistor laser (TL) with strain balanced Ge0.85Sn0.15 quantum well (QW) in the base. The frequency response of TL for common base (CB) configuration is calculated from small signal relationship between the photon density (s(jω)) and emitter current density ( je(jΩ)) by solving laser rate equation and continuity equation considering the virtual states as a conversion mechanism. The intrinsic response of TL with and without quantum capture and escape effect of carriers on modulation bandwidth are also shown. Further, bandwidth of TL in CB configuration is obtained as ~4.5 GHz at 2 mA bias current with zero resonance and it increases with larger escape time and reduced capture time of carrier in QW.
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Ravi Ranjan, Ravi Ranjan, Prakash Pareek, Prakash Pareek, Mukul K. Das, Mukul K. Das, } "Analysis of carrier dynamic effects on frequency response of tin incorporated group-IV alloy-based transistor laser", Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 100980T (22 February 2017); doi: 10.1117/12.2252655; https://doi.org/10.1117/12.2252655
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