22 February 2017 Two-dimensional modeling of AlInAs avalanche photodiodes for high gain-bandwidth product
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Abstract
In this work, two-dimensional modeling of planar junction AlInAs avalanche photodiodes is reported. Modeling results of dark/photo current, multiplication gain, breakdown voltage, -3dB bandwidth and gain-bandwidth product, and excess noise etc., are presented. The modeling results of multiplication gain and -3dB bandwidth are consistent with the reported experimental demonstration. Design optimization is also explored for high gain-bandwidth product for such AlInAs avalanche photodiodes.
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Yegao Xiao, Yegao Xiao, Zhiqiang Li, Zhiqiang Li, Michel Lestrade, Michel Lestrade, Zhanming S. Li, Zhanming S. Li, } "Two-dimensional modeling of AlInAs avalanche photodiodes for high gain-bandwidth product", Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 1009825 (22 February 2017); doi: 10.1117/12.2252565; https://doi.org/10.1117/12.2252565
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