Absorption of light inevitably leads to a self-heating of each type of solar cell, either due to the excess energy of absorbed photons or non-radiative recombination of charge carriers. Although the effect of temperature on solar cell parameters such as the open-circuit voltage are well known, it is often ignored in Suns-Voc measurements . This measurement technique enables direct access to the diode ideality factor without an influence by series resistance. A frequently seen decrease of the ideality factor or a saturation of the open-circuit voltage at high illumination intensities is often attributed solely to surface recombination , the shape of the density of states (DOS) , or the quality of the back contact in inorganic solar cells . In this work, we present an analytical model for taking into account absorption induced self-heating in Suns-Voc measurements and validate it for various solar cell technologies such as small molecule organic solar cells, perovskite solar cells, and inorganic solar cells. Furthermore, with an adapted Suns-Voc technique, we are able to not only correctly determine the ideality factor, but also the relevant energy gap of the solar cell, which is especially of interest in the field of novel solar cell technologies.
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