Using the combination of TiN and polymer significantly broadened the absorption band due to the ability of TiN to localize light inside P3HT:PC70BM in addition to its ability to absorb light at longer wavelengths. The optimized structure enhanced the absorbed power by 95% and the optimal short circuit current by 123% over the same structure without the TiN nanowires. Electric field distribution is studied at different wavelengths to gain further insight on the localization of light inside the structure.
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