16 February 2017 Electro-optic KTN deflector stabilized with 405-nm light irradiation for wavelength-swept light source
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Proceedings Volume 10100, Optical Components and Materials XIV; 101000H (2017) https://doi.org/10.1117/12.2251413
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
We have developed a highly stable electro-optic KTa1-xNbxO3 (KTN) deflector by enhancing electron transportation through KTN crystal. The amount of current is increased with 405-nm light irradiation to rapidly generate a stable refractive-index change, which induces deflection. The deflection angle is set at 160 mrad within tens of seconds and is kept at that angle for 3,000 hours. The developed deflector has been applied to a wavelength-swept light source to measure the thickness of Si wafers with a 3.6-mm optical length. The precision of 0.1-μm has been continuously achieved corresponding to the stability of the KTN deflector.
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Yuzo Sasaki, Seiji Toyoda, Takashi Sakamoto, Joji Yamaguchi, Masahiro Ueno, Tadayuki Imai, Tadashi Sakamoto, Masatoshi Fujimoto, Mahiro Yamada, Koei Yamamoto, Eiichi Sugai, Shogo Yagi, "Electro-optic KTN deflector stabilized with 405-nm light irradiation for wavelength-swept light source", Proc. SPIE 10100, Optical Components and Materials XIV, 101000H (16 February 2017); doi: 10.1117/12.2251413; https://doi.org/10.1117/12.2251413
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