16 February 2017 Design and characterization of 1.1 micron pixel image sensor with high near infrared quantum efficiency
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Proceedings Volume 10100, Optical Components and Materials XIV; 101001B (2017) https://doi.org/10.1117/12.2253192
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
At the 940 nm wavelength, solar background irradiance is relatively low and device-mounted monochromatic LED emission can be used to illuminate and assess the shape, distance, and optical properties of objects. We report here NIR imaging that outperforms existing CMOS sensors by achieving record 42% quantum efficiency at 940 nm for a 1.1 μm pixel. The rationally engineered material properties of QuantumFilm allow tuning of the spectral response to the desired wavelength to achieve quantum efficiency that exceeds 40%. In addition, the combination of high QE with QuantumFilm’s distinctive film-based electronic global shutter mechanism allows for extremely low illumination power and therefore lowers time-averaged system power when imaging with active illumination.
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Zach M. Beiley, Andras Pattantyus-Abraham, Erin Hanelt, Bo Chen, Andrey Kuznetsov, Naveen Kolli, Edward H. Sargent, "Design and characterization of 1.1 micron pixel image sensor with high near infrared quantum efficiency", Proc. SPIE 10100, Optical Components and Materials XIV, 101001B (16 February 2017); doi: 10.1117/12.2253192; https://doi.org/10.1117/12.2253192
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