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24 February 2017 A low noise readout integrated circuit for Nb5N6 microbolometer array detector
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Abstract
We present a readout circuit for 1 × 64 Nb5N6 microbolometer array detector. The intrinsic average responsivity of the detectors in the array is 650 V/W, and the corresponding noise equivalent power (NEP) is 17 pW/√Hz. Due to the low noise of the detector, we design a low noise readout circuit with 64 channels. The readout integrated circuit (ROIC) is fabricated under CMOS process with 0.18μm design rule, which has built-in bias and adjustable numerical-controlled output current. Differential structure is used for each pixel to boost capacity of resisting disturbance. A multiplexer and the second stage amplifier is followed after the ROIC. It is shown that the ROIC achieves an average gain of ~47dB and a voltage noise spectral density of ~9.34nV/√Hz at 10KHz. The performance of this readout circuit nearly fulfills the requirements for THz array detector. This readout circuit is fit for the detector, which indicates a good way to develop efficient and low-cost THz detector system.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhou Jiang, Chao Wan, Peng Xiao, Chengtao Jiang, Xuecou Tu, Xiaoqing Jia, Lin Kang, Jian Chen, and Peiheng Wu "A low noise readout integrated circuit for Nb5N6 microbolometer array detector", Proc. SPIE 10103, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications X, 101030A (24 February 2017); https://doi.org/10.1117/12.2251400
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