PROCEEDINGS VOLUME 10104
SPIE OPTO | JAN 28 - FEB 2 2017
Gallium Nitride Materials and Devices XII
Proceedings Volume 10104 is from: Logo
SPIE OPTO
Jan 28 - Feb 2 2017
San Francisco, California, United States
Front Matter: Volume 10104
Proc. SPIE 10104, Front Matter: Volume 10104, 1010401(23 March 2017);doi: 10.1117/12.2276185
Growth I
Proc. SPIE 10104, Recent progress of high-quality GaN substrates by HVPE method, 1010403(16 February 2017);doi: 10.1117/12.2257202
Proc. SPIE 10104, Semi-insulating HVPE-GaN grown on native seeds (Conference Presentation), 1010404();doi: 10.1117/12.2250907
Proc. SPIE 10104, Ultraviolet microcavity light-emitting diode with ion-implanted current aperture (Conference Presentation), 1010405();doi: 10.1117/12.2249958
Growth II
Proc. SPIE 10104, Predicted lattice-misfit stresses in a gallium-nitride (GaN) film, 1010408(16 February 2017);doi: 10.1117/12.2246963
Material Characterization I
Proc. SPIE 10104, Carrier dynamics studies of III-nitride materials using photo-acoustic and photoluminescence measurements, 1010409(16 February 2017);doi: 10.1117/12.2252468
Proc. SPIE 10104, Facet temperature measurement of GaN-based laser diodes using thermoreflectance spectroscopy (Conference Presentation), 101040B();doi: 10.1117/12.2252940
Material Characterization II
Proc. SPIE 10104, Intersubband transitions in the THz using GaN quantum wells (Conference Presentation), 101040C();doi: 10.1117/12.2252455
Proc. SPIE 10104, Freezing of quantum confinement Stark effect at low temperatures? (Conference Presentation), 101040D();doi: 10.1117/12.2252205
Proc. SPIE 10104, Long wavelength emission on relaxed InGaN substrates (Conference Presentation), 101040G();doi: 10.1117/12.2252290
Material Characterization III
Proc. SPIE 10104, Design of Al-rich AlGaN quantum well structures for efficient UV emitters, 101040I(16 February 2017);doi: 10.1117/12.2254797
Proc. SPIE 10104, AlGaN-based metal-semiconductor-metal photodetectors with high external quantum efficiency at low operating voltage, 101040J(16 February 2017);doi: 10.1117/12.2250742
Proc. SPIE 10104, Evaluation of intervalley energy of GaN conduction band by ultrafast pump-probe spectroscopy (Conference Presentation), 101040L();doi: 10.1117/12.2250622
Proc. SPIE 10104, Gallium nitride: a material for future betavoltaic (Conference Presentation), 101040N();doi: 10.1117/12.2252962
Nanostructures and Devices I
Proc. SPIE 10104, Impact of InGaN alloy disorder on LED properties (Conference Presentation), 101040O();doi: 10.1117/12.2250936
Proc. SPIE 10104, Electrical and optical properties of flexible nanowire blue light-emitting diodes under mechanical bending (Conference Presentation), 101040P();doi: 10.1117/12.2254543
Proc. SPIE 10104, Radiative recombination in polar, non-polar, and semi-polar III-nitride quantum wells, 101040Q(16 February 2017);doi: 10.1117/12.2252036
Proc. SPIE 10104, Photo-induced droop in blue to red light-emitting GaInN-GaN heterostructures (Conference Presentation), 101040R();doi: 10.1117/12.2250361
Nanostructures and Devices II
Proc. SPIE 10104, Nanoscale characterization of GaN/InGaN multiple quantum wells on GaN nanorods by photoluminescence spectroscopy, 101040U(16 February 2017);doi: 10.1117/12.2249931
Proc. SPIE 10104, Health-friendly high-quality white light using violet-green-red laser and InGaN nanowires-based true yellow nanowires light-emitting diodes, 101040V(16 February 2017);doi: 10.1117/12.2250285
Proc. SPIE 10104, Quantum-dot like localization in AlGaN nanowires (Conference Presentation), 101040W();doi: 10.1117/12.2250329
Nanostructures and Devices III
Proc. SPIE 10104, Single-photon emission from a high-purity hexagonal boron nitride crystal (Conference Presentation), 101040Z();doi: 10.1117/12.2255811
Proc. SPIE 10104, Growth of tapered GaN nanorod and the study of its growth mechanism (Conference Presentation), 1010412();doi: 10.1117/12.2249542
Proc. SPIE 10104, Electrically conductive ZnO/GaN distributed Bragg reflectors grown by hybrid plasma-assisted molecular beam epitaxy, 1010413(16 February 2017);doi: 10.1117/12.2250126
Electron Devices I
Proc. SPIE 10104, Current status and future on GaN power devices for automobile applications (Conference Presentation), 1010416();doi: 10.1117/12.2254513
Proc. SPIE 10104, Optimal III-nitride HEMTs: from materials and device design to compact model of the 2DEG charge density, 1010418(16 February 2017);doi: 10.1117/12.2251582
Electron Devices II
Proc. SPIE 10104, GaN HEMTs with p-GaN gate: field- and time-dependent degradation, 1010419(16 February 2017);doi: 10.1117/12.2250334
Proc. SPIE 10104, Use of sub-bandgap optical pumping to identify defects in AlGaN/GaN high electron mobility transistors (Conference Presentation), 101041A();doi: 10.1117/12.2251166
Proc. SPIE 10104, Electrical characteristics of high-power AlGaN-GaN high electron mobility transistors irradiated with protons and heavy ions, 101041B(16 February 2017);doi: 10.1117/12.2250250
Electron Devices III
Proc. SPIE 10104, 200-mm GaN/Si technology for power device applications (Conference Presentation), 101041C();doi: 10.1117/12.2250249
Proc. SPIE 10104, Piezoelectric modulation of surface voltage in GaN and AlGaN/GaN: charge screening effects and 2DEG, 101041E(16 February 2017);doi: 10.1117/12.2249593
Proc. SPIE 10104, Investigation of GaN Fin-HEMTs with micron-scale fin width, 101041F(16 February 2017);doi: 10.1117/12.2257211
Laser Diodes
Proc. SPIE 10104, Recent improvement in nitride lasers, 101041H(16 February 2017);doi: 10.1117/12.2247988
Proc. SPIE 10104, Demonstration of nitride-based lasers excited by electron beam (Conference Presentation), 101041I();doi: 10.1117/12.2254255
Proc. SPIE 10104, Modeling of optical and electrical confinements in nitride VCSELs, 101041J(16 February 2017);doi: 10.1117/12.2253624
Proc. SPIE 10104, AlGaInN laser-diode technology for optical clocks and atom interferometry, 101041L(16 February 2017);doi: 10.1117/12.2250322
Proc. SPIE 10104, Suppressing the incorporation of carbon impurity in AlGaN:Mg for green LDs with low operation voltage (Conference Presentation), 101041M();doi: 10.1117/12.2267849
LEDs I
Proc. SPIE 10104, Current status and future works of high-power deep UV LEDs (Conference Presentation), 101041N();doi: 10.1117/12.2250000
Proc. SPIE 10104, Over 10% EQE AlGaN deep-UV LED using transparent p-AlGaN contact layer (Conference Presentation), 101041P();doi: 10.1117/12.2254100
Proc. SPIE 10104, Dominant transverse-electric polarized emission from 298 nm MBE-grown AlN-delta-GaN quantum well ultraviolet light-emitting diodes, 101041R(16 February 2017);doi: 10.1117/12.2252487
Proc. SPIE 10104, Improved light extraction and quantum efficiencies for UVB LEDs with UV-transparent p-AlGaN superlattices (Conference Presentation), 101041S();doi: 10.1117/12.2250573
LEDs II
Proc. SPIE 10104, Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications, 101041U(16 February 2017);doi: 10.1117/12.2251144
Proc. SPIE 10104, Direct comparison of structural and optical properties of a nitride-based core-shell microrod LED by means of highly spatially-resolved cathodoluminescence and u-Raman (Conference Presentation), 101041V();doi: 10.1117/12.2251748
Proc. SPIE 10104, Novel device designs enabled by lattice-matched GaN-ZnGeN2 heterostructures (Conference Presentation), 101041W();doi: 10.1117/12.2252185
Proc. SPIE 10104, Gallium nitride light sources for optical coherence tomography, 101041X(16 February 2017);doi: 10.1117/12.2252665
LEDs III
Proc. SPIE 10104, InGaN-based flexible light emitting diodes, 101041Y(16 February 2017);doi: 10.1117/12.2251618
Proc. SPIE 10104, 8-inch GaN on Si-based wafer-level chip-scale package (Conference Presentation), 101041Z();doi: 10.1117/12.2252465
Proc. SPIE 10104, Processing and characterization of high resolution GaN/InGaN LED arrays at 10 micron pitch for micro display applications, 1010422(16 February 2017);doi: 10.1117/12.2252196
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