Gallium Nitride Materials and Devices XII
Proceedings Volume 10104 is from: Logo
28 January - 2 February 2017
San Francisco, California, United States
Front Matter: Volume 10104
Proc. SPIE 10104, Front Matter: Volume 10104, 1010401 (23 March 2017);
Growth I
Proc. SPIE 10104, Recent progress of high-quality GaN substrates by HVPE method, 1010403 (16 February 2017);
Proc. SPIE 10104, Semi-insulating HVPE-GaN grown on native seeds (Conference Presentation), 1010404 ();
Proc. SPIE 10104, Ultraviolet microcavity light-emitting diode with ion-implanted current aperture (Conference Presentation), 1010405 ();
Growth II
Proc. SPIE 10104, Predicted lattice-misfit stresses in a gallium-nitride (GaN) film, 1010408 (16 February 2017);
Material Characterization I
Proc. SPIE 10104, Carrier dynamics studies of III-nitride materials using photo-acoustic and photoluminescence measurements, 1010409 (16 February 2017);
Proc. SPIE 10104, Facet temperature measurement of GaN-based laser diodes using thermoreflectance spectroscopy (Conference Presentation), 101040B ();
Material Characterization II
Proc. SPIE 10104, Intersubband transitions in the THz using GaN quantum wells (Conference Presentation), 101040C ();
Proc. SPIE 10104, Freezing of quantum confinement Stark effect at low temperatures? (Conference Presentation), 101040D ();
Proc. SPIE 10104, Long wavelength emission on relaxed InGaN substrates (Conference Presentation), 101040G ();
Material Characterization III
Proc. SPIE 10104, Design of Al-rich AlGaN quantum well structures for efficient UV emitters, 101040I (16 February 2017);
Proc. SPIE 10104, AlGaN-based metal-semiconductor-metal photodetectors with high external quantum efficiency at low operating voltage, 101040J (16 February 2017);
Proc. SPIE 10104, Evaluation of intervalley energy of GaN conduction band by ultrafast pump-probe spectroscopy (Conference Presentation), 101040L ();
Proc. SPIE 10104, Gallium nitride: a material for future betavoltaic (Conference Presentation), 101040N ();
Nanostructures and Devices I
Proc. SPIE 10104, Impact of InGaN alloy disorder on LED properties (Conference Presentation), 101040O ();
Proc. SPIE 10104, Electrical and optical properties of flexible nanowire blue light-emitting diodes under mechanical bending (Conference Presentation), 101040P ();
Proc. SPIE 10104, Radiative recombination in polar, non-polar, and semi-polar III-nitride quantum wells, 101040Q (16 February 2017);
Proc. SPIE 10104, Photo-induced droop in blue to red light-emitting GaInN-GaN heterostructures (Conference Presentation), 101040R ();
Nanostructures and Devices II
Proc. SPIE 10104, Nanoscale characterization of GaN/InGaN multiple quantum wells on GaN nanorods by photoluminescence spectroscopy, 101040U (16 February 2017);
Proc. SPIE 10104, Health-friendly high-quality white light using violet-green-red laser and InGaN nanowires-based true yellow nanowires light-emitting diodes, 101040V (16 February 2017);
Proc. SPIE 10104, Quantum-dot like localization in AlGaN nanowires (Conference Presentation), 101040W ();
Nanostructures and Devices III
Proc. SPIE 10104, Single-photon emission from a high-purity hexagonal boron nitride crystal (Conference Presentation), 101040Z ();
Proc. SPIE 10104, Growth of tapered GaN nanorod and the study of its growth mechanism (Conference Presentation), 1010412 ();
Proc. SPIE 10104, Electrically conductive ZnO/GaN distributed Bragg reflectors grown by hybrid plasma-assisted molecular beam epitaxy, 1010413 (16 February 2017);
Electron Devices I
Proc. SPIE 10104, Current status and future on GaN power devices for automobile applications (Conference Presentation), 1010416 ();
Proc. SPIE 10104, Optimal III-nitride HEMTs: from materials and device design to compact model of the 2DEG charge density, 1010418 (16 February 2017);
Electron Devices II
Proc. SPIE 10104, GaN HEMTs with p-GaN gate: field- and time-dependent degradation, 1010419 (16 February 2017);
Proc. SPIE 10104, Use of sub-bandgap optical pumping to identify defects in AlGaN/GaN high electron mobility transistors (Conference Presentation), 101041A ();
Proc. SPIE 10104, Electrical characteristics of high-power AlGaN-GaN high electron mobility transistors irradiated with protons and heavy ions, 101041B (16 February 2017);
Electron Devices III
Proc. SPIE 10104, 200-mm GaN/Si technology for power device applications (Conference Presentation), 101041C ();
Proc. SPIE 10104, Piezoelectric modulation of surface voltage in GaN and AlGaN/GaN: charge screening effects and 2DEG, 101041E (16 February 2017);
Proc. SPIE 10104, Investigation of GaN Fin-HEMTs with micron-scale fin width, 101041F (16 February 2017);
Laser Diodes
Proc. SPIE 10104, Recent improvement in nitride lasers, 101041H (16 February 2017);
Proc. SPIE 10104, Demonstration of nitride-based lasers excited by electron beam (Conference Presentation), 101041I ();
Proc. SPIE 10104, Modeling of optical and electrical confinements in nitride VCSELs, 101041J (16 February 2017);
Proc. SPIE 10104, AlGaInN laser-diode technology for optical clocks and atom interferometry, 101041L (16 February 2017);
Proc. SPIE 10104, Suppressing the incorporation of carbon impurity in AlGaN:Mg for green LDs with low operation voltage (Conference Presentation), 101041M ();
Proc. SPIE 10104, Current status and future works of high-power deep UV LEDs (Conference Presentation), 101041N ();
Proc. SPIE 10104, Over 10% EQE AlGaN deep-UV LED using transparent p-AlGaN contact layer (Conference Presentation), 101041P ();
Proc. SPIE 10104, Dominant transverse-electric polarized emission from 298 nm MBE-grown AlN-delta-GaN quantum well ultraviolet light-emitting diodes, 101041R (16 February 2017);
Proc. SPIE 10104, Improved light extraction and quantum efficiencies for UVB LEDs with UV-transparent p-AlGaN superlattices (Conference Presentation), 101041S ();
Proc. SPIE 10104, Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications, 101041U (16 February 2017);
Proc. SPIE 10104, Direct comparison of structural and optical properties of a nitride-based core-shell microrod LED by means of highly spatially-resolved cathodoluminescence and u-Raman (Conference Presentation), 101041V ();
Proc. SPIE 10104, Novel device designs enabled by lattice-matched GaN-ZnGeN2 heterostructures (Conference Presentation), 101041W ();
Proc. SPIE 10104, Gallium nitride light sources for optical coherence tomography, 101041X (16 February 2017);
Proc. SPIE 10104, InGaN-based flexible light emitting diodes, 101041Y (16 February 2017);
Proc. SPIE 10104, 8-inch GaN on Si-based wafer-level chip-scale package (Conference Presentation), 101041Z ();
Proc. SPIE 10104, Processing and characterization of high resolution GaN/InGaN LED arrays at 10 micron pitch for micro display applications, 1010422 (16 February 2017);
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