16 February 2017 Carrier dynamics studies of III-nitride materials using photo-acoustic and photoluminescence measurements
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Abstract
Internal quantum efficiency (IQE) of radiative recombination for photo-excited carriers in compound semiconductor materials is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is unity. III-nitride semiconductors, however, usually have large defect-density, and the assumption is not necessarily valid. In this study, we developed a new method to estimate accurate IQE values by simultaneous PL and photo-acoustic (PA) measurements, and demonstratively evaluated the IQE values for an InGaN quantum-well sample. The results show that the conventional method cannot give accurate IQE values, and that our method is a promising way for accurate estimation of absolute IQE values, which could lead to the accurate estimation of radiative and nonradiative recombination lifetimes in carrier dynamics studies.
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Atsushi A. Yamaguchi, Takashi Nakano, Shigeta Sakai, Haruki Fukada, Yuya Kanitani, Shigetaka Tomiya, "Carrier dynamics studies of III-nitride materials using photo-acoustic and photoluminescence measurements", Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 1010409 (16 February 2017); doi: 10.1117/12.2252468; https://doi.org/10.1117/12.2252468
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