16 February 2017 Design of Al-rich AlGaN quantum well structures for efficient UV emitters
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The effects of the structure design of AlGaN-based quantum wells (QWs) on the optical properties are discussed. We demonstrate that to achieve efficient emission in the germicidal wavelength range (250 – 280 nm), AlxGa1−xN QWs in an AlyGa1−yN matrix (x < y) is quite effective, compared with those in an AlN matrix: Time-resolved photoluminescence and cathodoluminescence spectroscopies show that the AlyGa1−yN matrix can enhance the radiative recombination process and can prevent misfit dislocations, which act as non-radiative recombination centers, from being induced in the QW interface. As a result, the emission intensity at room temperature is about 2.7 times larger for the AlxGa1−xN QW in the AlyGa1−yN matrix than that in the AlN matrix. We also point out that further reduction of point defects is crucial to achieve an even higher emission efficiency.
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Mitsuru Funato, Mitsuru Funato, Shuhei Ichikawa, Shuhei Ichikawa, Kyosuke Kumamoto, Kyosuke Kumamoto, Yoichi Kawakami, Yoichi Kawakami, } "Design of Al-rich AlGaN quantum well structures for efficient UV emitters", Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101040I (16 February 2017); doi: 10.1117/12.2254797; https://doi.org/10.1117/12.2254797

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