16 February 2017 AlGaN-based metal-semiconductor-metal photodetectors with high external quantum efficiency at low operating voltage
Author Affiliations +
Abstract
Solar blind Al0.5Ga0.5N/AlN metal-semiconductor-metal photodetectors (MSM PDs) are characterized by means of photocurrent spectroscopy. In order to enhance the external quantum efficiency (EQE) at low bias voltages several strategies have been adopted including absorber layer thicknesses, electrode layout and metallization scheme. Analysis of experimental EQE-bias characteristics under top and bottom illumination conditions reveals (1) a correlation between EQE and electrode pair density for symmetric electrode designs and (2) a slight asymmetry of the EQE with respect to bias polarity for bottom-illuminated MSM PD consisting of electrode pairs with different electrode widths (asymmetric design) and (3) zero-bias operation for a-MSM PD consisting of electrode pairs with different metallization schemes. In addition, the combination of thin absorber layer and asymmetric electrode design leads to high EQE values under bottom illumination at very low voltages and zero-bias operation is achieved for the a-MSM detector. The zero-bias EQE of the a-MSM is further enhanced by combining the symmetric detector design with a high electrode pair density.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Brendel, F. Brunner, A. Knigge, M. Weyers, "AlGaN-based metal-semiconductor-metal photodetectors with high external quantum efficiency at low operating voltage", Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101040J (16 February 2017); doi: 10.1117/12.2250742; https://doi.org/10.1117/12.2250742
PROCEEDINGS
9 PAGES + PRESENTATION

SHARE
RELATED CONTENT

Solar-blind avalanche photodiodes
Proceedings of SPIE (February 28 2006)
Breakdown mechanisms in Al(GaN) MSM photodetectors
Proceedings of SPIE (April 08 1998)
III-nitride photon counting avalanche photodiodes
Proceedings of SPIE (February 01 2008)
High-quantum-efficiency solar-blind photodetectors
Proceedings of SPIE (July 06 2004)

Back to Top