CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 10104 > Article
Presentation
19 April 2017 Impact of InGaN alloy disorder on LED properties (Conference Presentation)
Claude Weisbuch
Author Affiliations +
Proceedings Volume 10104, Gallium Nitride Materials and Devices XII; 101040O (2017) https://doi.org/10.1117/12.2250936
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
It emerges that LEDs properties are strongly impacted by intrinsic disorder induced by random In compositional fluctuations. They obviously impact the light emission spectrum and carrier mobilities. The quantitative evaluation of their impact in full heterostructures is made difficult by the extreme demand on computing resources when calculating solutions of the Schrödinger equation for a disordered 3D potential map. Calculations are then limited to small volumes and to the first few quantum states, not allowing for simulations of transport properties in full devices. It was recently shown in a simplified model that disorder can account for a turn-on voltage of LEDs smaller by 1V compared to standard simulations. We will present novel theoretical and modeling tools of disorder, namely the Filoche-Mayboroda 3D localization landscape theory, which from the original disordered energy map provides an effective potential which allows to use standard transport equations while accounting for microscopic disorder. We thus gain a deep understanding of various effects of disorder in nitride heterostructures on their electrical and optoelectronic properties. As a first application of the new tool we model our detailed measurements of the absorption edge of InGaN/GaN quantum wells with varying In composition. The tool is then applied to carrier transport in full LED structures. The effective potential increases current at a given bias voltage by accounting for two quantum effects of disorder, tunneling and confinement, which together smooth out potential discontinuities in the heterostructure. Quantum efficiency, Auger and leakage droop, ideality factor of the LED will be discussed.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Claude Weisbuch "Impact of InGaN alloy disorder on LED properties (Conference Presentation)", Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101040O (19 April 2017); https://doi.org/10.1117/12.2250936
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Light emitting diodes
3D modeling
Heterojunctions
Indium gallium nitride
3D imaging standards
Absorption
Optoelectronics
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top