Electrical and optical properties of flexible nanowire blue light-emitting diodes under mechanical bending (Conference Presentation)

Mohsen Asad; Renjie Wang; Yong-Ho Ra; William S. Wong; Zetian Mi

doi:10.1117/12.2254543

19 April 2017 Electrical and optical properties of flexible nanowire blue light-emitting diodes under mechanical bending (Conference Presentation)

Mohsen Asad, Renjie Wang, Yong-Ho Ra, William S. Wong, Zetian Mi

Author Affiliations +

Proceedings Volume 10104, Gallium Nitride Materials and Devices XII; 101040P (2017) https://doi.org/10.1117/12.2254543
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

III-Nitride-based nanowire LEDs have shown high internal quantum efficiency and stable light emission over a wide current range to enable white phosphor-free white-light emission. The structures provide a unique advantage for flexible electronics where the out-of-plane three-dimensional nanowires are invariant to applied bending. Testing this concept, InGaN dot-in-wire light-emitting diodes on sapphire substrates were transferred onto flexible polyethylene terephthalate (PET) substrates using a bonding and laser-liftoff process. In0.15Ga0.85N nanowire blue LEDs were grown on sapphire substrates having Ni/Au contacts applied to the top p-doped region and a lateral insulating polyimide layer applied between the nanowires. The nanowire structures were then bonded onto a transfer wafer and separated from its sapphire growth substrate by laser-liftoff (LLO) using a 266 nm KrF laser. A double-transfer technique, where the inverted LED structures were then transferred and bonded onto the PET with a silver-based adhesive that formed the final bottom contact. The LEDs before and after the transfer process did not show measurable degradation in the I-V and optical characteristics. The 425 nm luminescence peak was found to remain constant during applied mechanical strain on the flexible substrate suggesting the nanowire LEDs did not experience any plane-strain during bending. A constant 2.5 V turn-on voltage, and a forward current of 0.4 mA at 4 V was measured under concave and convex bending. Atomic force and scanning electron microscopy characterization will also be shown of the nanowire device before and after double transfer as well as numerical simulation of the mechanical motion of the nanowire structures during bending.

Conference Presentation

Citation Download Citation

Mohsen Asad, Renjie Wang, Yong-Ho Ra, William S. Wong, and Zetian Mi "Electrical and optical properties of flexible nanowire blue light-emitting diodes under mechanical bending (Conference Presentation)", Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101040P (19 April 2017); https://doi.org/10.1117/12.2254543

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Nanowires

Light emitting diodes

Laser bonding

Sapphire

Blue light emitting diodes

Optical properties

Positron emission tomography

Show All Keywords

Keywords/Phrases

Search In:

Publication Years