16 February 2017 Electrical characteristics of high-power AlGaN-GaN high electron mobility transistors irradiated with protons and heavy ions
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Abstract
High electron mobility transistors (HEMTs) based on AlGaN-GaN hetero-structures are finding an increasing number of commercial and military applications that require high voltage, high power, and high efficiency operation. In recent years, leading GaN HEMT manufacturers have reported excellent RF power characteristics and encouraging reliability, but long-term reliability in the space environment still remains a major concern due to a large number of defects and traps present both in the bulk as well as at the surface, leading to undesirable characteristics including current collapse. Furthermore, degradation mechanisms in GaN HEMTs are still not well understood. Thus, reliability and radiation effects of GaN HEMTs should be studied before solid state power amplifiers (SSPAs) based on GaN HEMT technology are successfully deployed in space satellite systems. For the present study, we investigated electrical characteristics of high-power GaN HEMTs irradiated with protons and heavy ions under various irradiation and biasing conditions.
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Yongkun Sin, Jeremy Bonsall, Zachary Lingley, Miles Brodie, Maribeth Mason, "Electrical characteristics of high-power AlGaN-GaN high electron mobility transistors irradiated with protons and heavy ions", Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101041B (16 February 2017); doi: 10.1117/12.2250250; https://doi.org/10.1117/12.2250250
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