16 February 2017 Modeling of optical and electrical confinements in nitride VCSELs
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Abstract
In this paper, we present numerical simulations of different types of nitride VCSELs. We analyzed structures with different DBR mirrors and electrical confinements. We compare threshold parameters, including threshold current, threshold temperature and optical field distribution for structures with an ITO contact and structures with tunnel junctions. Lasers emitting blue/violet and green radiation are analyzed from the point of view of their thermal properties.
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P. Śpiewak, P. Śpiewak, M. Wasiak, M. Wasiak, A. K. Sokół, A. K. Sokół, R. P. Sarzała, R. P. Sarzała, } "Modeling of optical and electrical confinements in nitride VCSELs", Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101041J (16 February 2017); doi: 10.1117/12.2253624; https://doi.org/10.1117/12.2253624
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