16 February 2017 Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications
Author Affiliations +
Abstract
III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by the “efficiency droop” effect and the high-speed performance is limited by a relatively small -3 dB modulation bandwidth (<100 MHz). InGaN-based LDs were recently studied as a droop-free, high-speed emitter; yet it is associated with speckle-noise and safety concerns. In this paper, we presented the semipolar InGaN-based violet-blue emitting superluminescent diodes (SLDs) as a high-brightness and high-speed light source, combining the advantages of LEDs and LDs. Utilizing the integrated passive absorber configuration, an InGaN/GaN quantum well (QW) based SLD was fabricated on semipolar GaN substrate. Using SLD to excite a YAG:Ce phosphor, white light can be generated, exhibiting a color rendering index of 68.9 and a color temperature of 4340 K. Besides, the opto-electrical properties of the SLD, the emission pattern of the phosphor-converted white light, and the high-speed (Gb/s) visible light communication link using SLD as the transmitter have been presented and discussed in this paper.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chao Shen, Chao Shen, Tien Khee Ng, Tien Khee Ng, Changmin Lee, Changmin Lee, John T. Leonard, John T. Leonard, Shuji Nakamura, Shuji Nakamura, James S. Speck, James S. Speck, Steven P. Denbaars, Steven P. Denbaars, Ahmed Y. Alyamani, Ahmed Y. Alyamani, Munir M. El-Desouki, Munir M. El-Desouki, Boon S. Ooi, Boon S. Ooi, } "Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications", Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101041U (16 February 2017); doi: 10.1117/12.2251144; https://doi.org/10.1117/12.2251144
PROCEEDINGS
10 PAGES + PRESENTATION

SHARE
RELATED CONTENT


Back to Top