InGaN-based flexible light emitting diodes

C. Bayram

doi:10.1117/12.2251618

Translator Disclaimer

16 February 2017 InGaN-based flexible light emitting diodes

C. Bayram

Author Affiliations +

Proceedings Volume 10104, Gallium Nitride Materials and Devices XII; 101041Y (2017) https://doi.org/10.1117/12.2251618
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

Novel layer release and transfer technology of single-crystalline GaN semiconductors is attractive for enabling many novel applications including flexible photonics and hybrid device integration. To date, light emitting diode (LED) research has been primarily focused on rigid devices due to the thick growth substrate. This prevented fundamental research in flexible inorganic LEDs, and limited the applications of LEDs in the solid state lighting (due to the substrate cost) and in biophotonics (i.e. optogenetics) (due to LED rigidness). In the literature, a number of methods to achieve layer transfer have been reported including the laser lift-off, chemical lift-off, and Smartcut. However, the release of films of LED layers (i.e. GaN semiconductors) has been challenging since their elastic moduli and chemical resistivity are much higher than most conventional semiconductors. In this talk, we are going to review the existing technologies and new mechanical release techniques (i.e. spalling) to overcome these problems.

Conference Presentation

Citation Download Citation

C. Bayram "InGaN-based flexible light emitting diodes", Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101041Y (16 February 2017); https://doi.org/10.1117/12.2251618

PROCEEDINGS
8 PAGES + PRESENTATION

DOWNLOAD PDF SAVE TO MY LIBRARY

WATCH
PRESENTATION

SHARE

GET CITATION

< Previous Article

|

Next Article >

KEYWORDS

Light emitting diodes

Gallium nitride

Thin films

Semiconductors

LED lighting

Laser liftoff

Silicon carbide

Show All Keywords

RELATED CONTENT

Complete solid state lighting (SSL) line at CEA LETI
Proceedings of SPIE (September 25 2014)

Vertical thinking in blue light emitting diodes GaN on...
Proceedings of SPIE (March 13 2015)

Future and present technologies of solid state lighting (Presentation Video)
Proceedings of SPIE (April 27 2015)

Laser lift off of GaN thin film and its application...
Proceedings of SPIE (October 10 2012)

Excimer laser lift off for packaging and integration of GaN...
Proceedings of SPIE (October 17 2003)

Process development of GaN light emitting diodes with imbedded contacts
Proceedings of SPIE (October 15 2012)

Japanese semiconductor lighting project based on ultraviolet LED and phosphor...
Proceedings of SPIE (December 05 2001)

Subscribe to Digital Library

Receive Erratum Email Alert

Show All Keywords

Keywords/Phrases

Search In:

Publication Years