24 February 2017 Zn-vacancy related defects in ZnO grown by pulsed laser deposition
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Proceedings Volume 10105, Oxide-based Materials and Devices VIII; 101050F (2017) https://doi.org/10.1117/12.2267186
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
Undoped and Ga-doped ZnO (002) films were grown c-sapphire using the pulsed laser deposition (PLD) method. Znvacancy related defects in the films were studied by different positron annihilation spectroscopy (PAS). These included Doppler broadening spectroscopy (DBS) employing a continuous monenergetic positron beam, and positron lifetime spectroscopy using a pulsed monoenergetic positron beam attached to an electron linear accelerator. Two kinds of Znvacancy related defects namely a monovacancy and a divacancy were identified in the films. In as-grown undoped samples grown with relatively low oxygen pressure P(O2)≤1.3 Pa, monovacancy is the dominant Zn-vacancy related defect. Annealing these samples at 900 oC induced Zn out-diffusion into the substrate and converted the monovacancy to divacancy. For the undoped samples grown with high P(O2)=5 Pa irrespective of the annealing temperature and the as-grown degenerate Ga-doped sample (n=1020 cm-3), divacancy is the dominant Zn-vacancy related defect. The clustering of vacancy will be discussed.
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F. C. C. Ling, C. Q. Luo, Z. L. Wang, W. Anwand, A. Wagner, "Zn-vacancy related defects in ZnO grown by pulsed laser deposition", Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101050F (24 February 2017); doi: 10.1117/12.2267186; https://doi.org/10.1117/12.2267186
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