24 February 2017 Doping, co-doping, and defect effects on the plasmonic activity of ZnO-based transparent conductive oxides
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Proceedings Volume 10105, Oxide-based Materials and Devices VIII; 101050G (2017) https://doi.org/10.1117/12.2250736
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
Using simulations from first principles we investigate the microscopic role of doping on the optoelectronic properties of X-doped ZnO (XZO, X=Al, F), as transparent conductive oxide for energy applications. We show how the interplay between (co)dopants and defects affects TCO characteristics of the samples. Finally, we study the plasmonic activity of XZO in the near-IR/visible range and in particular at wavelength relevant for telecommunications (1.5 μm), confirming recent experimental results.
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Arrigo Calzolari, Arrigo Calzolari, Alessandra Catellani, Alessandra Catellani, } "Doping, co-doping, and defect effects on the plasmonic activity of ZnO-based transparent conductive oxides", Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101050G (24 February 2017); doi: 10.1117/12.2250736; https://doi.org/10.1117/12.2250736
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