24 February 2017 Oxide-based materials by atomic layer deposition
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Proceedings Volume 10105, Oxide-based Materials and Devices VIII; 101050L (2017) https://doi.org/10.1117/12.2256017
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
Thin films of wide band-gap oxides grown by Atomic Layer Deposition (ALD) are suitable for a range of applications. Some of these applications will be presented. First of all, ALD-grown high-k HfO2 is used as a gate oxide in the electronic devices. Moreover, ALD-grown oxides can be used in memory devices, in transparent transistors, or as elements of solar cells. Regarding photovoltaics (PV), ALD-grown thin films of Al2O3 are already used as anti-reflection layers. In addition, thin films of ZnO are tested as replacement of ITO in PV devices. New applications in organic photovoltaics, electronics and optoelectronics are also demonstrated Considering new applications, the same layers, as used in electronics, can also find applications in biology, medicine and in a food industry. This is because layers of high-k oxides show antibacterial activity, as discussed in this work.
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marek Godlewski, Rafał Pietruszka, Jarosław Kaszewski, Bartłomiej S. Witkowski, Sylwia Gierałtowska, Łukasz Wachnicki, Michał M. Godlewski, Anna Slonska, Zdzisław Gajewski, "Oxide-based materials by atomic layer deposition", Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101050L (24 February 2017); doi: 10.1117/12.2256017; https://doi.org/10.1117/12.2256017
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