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1 May 2017 Non-polar ZnO/(Zn,Mg)O heterostructures for intersubband devices: novel applications with an old material system? (Conference Presentation)
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Proceedings Volume 10105, Oxide-based Materials and Devices VIII; 101050N (2017) https://doi.org/10.1117/12.2253708
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
The development of Zinc Oxide (ZnO)-based applications have been strongly limited due to the lack of reproducible p-type doping. Here we present novel opportunities in the field of unipolar oxide wide band gap semiconductors. First we have developed the growth of nonpolar ZnO/ZnMgO multiple quantum wells (MQWs) and then we demonstrate that the structural and optical properties of the MQWs are reaching the required level for intersubband devices in terms of defects, surface and interface roughness and doping. We will show and discuss the most recent results as, for instance, intersubband transitions which have been observed in such structures. This "Zoterac" project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 665107
Conference Presentation
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Michel Chauveau, Maxime Hugues, Nolwenn Le Biavan, Denis Lefebvre, Miguel Montes Bajo, Julen Tamayo-Arriola, Adrián Hierro, Patrick Quach, Arnaud Jollivet, Nathalie Isac, Adel Bousseksou, Maria Tchernycheva, François H. Julien, Borislav Hinkov, Gottfried Strasser, Romain Peretti, Giaccomo Scalari, and Jérôme Faist "Non-polar ZnO/(Zn,Mg)O heterostructures for intersubband devices: novel applications with an old material system? (Conference Presentation)", Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101050N (1 May 2017); https://doi.org/10.1117/12.2253708
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