2 March 2017 Near-IR (1 – 4 μm) control of plasmonic resonance wavelength in Ga-doped ZnO
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Proceedings Volume 10105, Oxide-based Materials and Devices VIII; 101050Q (2017) https://doi.org/10.1117/12.2255763
Event: SPIE OPTO, 2017, San Francisco, California, United States
Abstract
The plasmonic resonance wavelength λres in ZnO doped with 3wt%Ga2O3 can be controlled over the range 1 – 4 μm by simple furnace annealing in flowing Ar. For each annealing temperature TA, the reflectance Rm and transmittance Tm are measured over a wavelength range, λ = 185 – 3200 nm, (energy range, E = 6.7 – 0.387 eV), and the reflectance coefficient R is calculated from Rm and Tm. The value of λres is then determined from a Drude-theory analysis of R vs E that yields fitting parameters nopt (optical carrier concentration), μopt (optical mobility), high-frequency dielectric constant ε, and thickness d, at each annealing temperature TA. The validity of this process is confirmed by comparison of ε with literature values, and comparison of nopt and μopt with analogous quantities n and μH measured by the Hall-effect.
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David C. Look, Kevin D. Leedy, Gordon J. Grzybowski, Bruce B. Claflin, "Near-IR (1 – 4 μm) control of plasmonic resonance wavelength in Ga-doped ZnO", Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101050Q (2 March 2017); doi: 10.1117/12.2255763; https://doi.org/10.1117/12.2255763
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